dmn2230u document number: ds31180 rev. 5 - 2 1 of 5 www.diodes.com january 2012 ? diodes incorporated dmn2230u new product n-channel enhancement mode mosfet features ? low on-resistance ? 110 m @ v gs = 4.5v ? 145 m @ v gs = 2.5v ? 230 m @ v gs = 1.8v ? low gate threshold voltage ? low input capacitance ? fast switching speed ? lead, halogen and antimony free, rohs compliant "green" device (notes 1, 2 and 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.008 grams (approximate) ordering information (note 4) part number case packaging dmn2230u-7 sot23 3000/tape & reel notes: 1. no purposefully added lead. halogen and antimony free. 2. diodes inc.?s ?green? policy can be found on our webs ite at http://www.diodes.com /products/lead_free/index.php. 3. product manufactured with green moldi ng compound and does not contain halogens or sb 2 o 3 fire retardants. 4. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 code u v w x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot23 top view top view internal schematic d gs 22n = marking code ym = date code marking y = year (ex: u = 2007) m = month (ex: 9 = september) 22n ym
dmn2230u document number: ds31180 rev. 5 - 2 2 of 5 www.diodes.com january 2012 ? diodes incorporated dmn2230u new product maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 12 v drain current (note 5) i d 2.0 a pulsed drain current (note 6) i dm 7 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 5) p d 600 mw thermal resistance, junction to ambient r ja 208 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 10 a zero gate voltage drain current i dss ? ? 1 a v ds = 20v, v gs = 0v gate-source leakage i gss ? ? 10 a v gs = 12v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) 0.5 ? 1.0 v v ds = v cs , i d = 250 a static drain-source on-resistance r ds (on) ? 81 113 170 110 145 230 m v gs = 4.5v, i d = 2.5a v gs = 2.5v, i d = 1.5a v gs = 1.8v, i d = 1.0a forward transfer admittance |y fs | ? 5 ? s v ds = 5v, i d = 2.4a diode forward voltage (note 7) v sd ? 0.8 1.1 v v gs = 0v, i s = 1.05a dynamic characteristics input capacitance c iss ? 188 ? pf v ds = 10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 44 ? pf reverse transfer capacitance c rss ? 30 ? pf total gate charge q g ? 2.3 ? nc v ds = 10v, i d = 11.6a gate-source charge q g s ? 0.3 ? nc gate-drain charge q g d ? 0.5 ? nc turn-on delay time t d ( on ) ? 8 ? ns v dd = 10v, r l = 10 i d = 1a, v gen = 4.5v, r g = 6 rise time t r ? 3.8 ? turn-off delay time t d ( off ) ? 19.6 ? fall time t f ? 8.3 ? notes: 5. device mounted on fr-4 pcb, or minimum recommended pad layout 6. repetitive rating, pulse width limited by junction temperature. 7. short duration pulse test used to minimize self-heating effect.
dmn2230u document number: ds31180 rev. 5 - 2 3 of 5 www.diodes.com january 2012 ? diodes incorporated dmn2230u new product 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 0 0.5 1 1.5 2 2.5 3 3.5 4 fig. 3 on-resistance vs. drain-source current & gate voltage i , drain-source current d r , static drain-source on-resistance ( ) ds(on) v = 1.8v gs v = 2.5v gs v = 4.5v gs 0.01 0.1 1 0.01 0.1 1 10 fig. 4 normalized static drain-source on-resistance vs. ambient temperature 0.6 0.8 1 1.2 1.4 1.6 1. 8 -50 -25 25 50 150 t , ambient temperature (c) a r normalized ds(on) v = 2.5v i = 1.5a gs d v = 4.5v i = 2.5a gs d v = 1.8v i = 1.0a gs d 07 51 2 5 100 fig. 5 gate threshold variation with temperature 0 0.2 0.4 0.6 0.8 1 -50-25 0 25 50 75100125150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 250a d fig. 6 typical total capacitance 10 100 1,000 0 2 4 6 8 10 12 14 16 18 20 v , drain-source voltage (v) ds c , t o t al c a p a c i t an c e (p f ) c iss c oss c rss f = 1mhz
dmn2230u document number: ds31180 rev. 5 - 2 4 of 5 www.diodes.com january 2012 ? diodes incorporated dmn2230u new product fig. 7 reverse drain current vs. source-drain voltage 0.0001 0.001 0.01 0.1 1 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v , source-drain voltage (v) sd i, s o u r c e c u r r e n t (a) s 0123 45 q (nc) g , total gate charge fig. 8 gate charge 0 2 4 6 8 10 v g a t e t h r es h o ld v o l t a g e (v) gs v = 10v i= a ds d 11.6 0.1 1 10 100 v , drain-source voltage (v) fig. 9 soa, safe operation area ds 0.01 0.1 1 10 100 i, d r ain c u r r en t (a) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w t = 150c t = 25c single pulse dut on 1 * mrp board v = 12v j(max) a gs package outline dimensions sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.903 1.10 1.00 k1 - - 0.400 l 0.45 0.61 0.55 m 0.085 0.18 0.11 0 8 - all dimensions in mm a m j l d f b c h k g k1
dmn2230u document number: ds31180 rev. 5 - 2 5 of 5 www.diodes.com january 2012 ? diodes incorporated dmn2230u new product suggested pad layout important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 x e y c z
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